THE STRUCTURE AND CHEMICAL COMPOSITION OF SEMICONDUCTOR MATERIAL Sn(Se0,2S0.8) THIN FILM PREPARED USING EVAPORATION METHOD FOR SOLAR CELL APPLICATION

Abstract

This research aims to grow a thin film Sn(Se_0.2S_0.8) by evaporation method. The researcher can understand the effect of spacer variations towards the crystal structure, lattice parameter, surface morphology, and chemical composition of Sn(Se_0,2S_0,8) thin film. The process of Sn(Se_0.2S_0.8) thin film preparation was done by using the evaporation method with pressure about 2 x 10^-5 mbar. The process of Sn(Se_0.2S_0.8) thin film deposition was performed by giving some space between the substrate and the source i.e. 25 cm, 15 cm, and 10 cm. Characterization process was performed by using X-ray Diffraction (XRD) to determine the structure and parameter of thin film, Scanning Electron Microscopy  (SEM) to determine the thin film of surface morphology, and Energy Dispersive Analysis X-Ray (EDAX)  to determine the chemical composition of the thin film. The result of XRD characterization show that the Sn(Se_0.2S_0.8) thin film was  polycrystalline and it has an orthorombic crystal structure, with the lattice parameter  were sample 1 (spacer 25 cm): a = 4.306 Å, b = 11.30 Å, c = 4.139 Å; sample 2 (spacer 15 cm): a = 4.286 Å, b = 11.18 Å, c = 4.123 Å; sample 3 (spacer 10 cm): a = 4.301 Å, b = 11.30 Å, c = 4.143 Å. The result of SEM characterization in the sample 2 of Sn(Se_0.2S_0.8) showed that the surface morphology of the sample consisted of homogeneous oval shaped grains, with the diameter size of crystal grains on the surface about 0.3 μm – 0.5 μm. The result of EDAX analysis showed that comparison of percentage of chemical composition thin film Sn(Se_0.2S_0.8) was 1 : 0.11 : 0.79.

Keywords: evaporation method, semiconductor Sn(Se_0.2S_0.8), solar cell, material characteristics